Inhaltsverzeichnis
Repetition Transistor Models
Structure of MOSFET
Inversion
Ohmic region
Pinch - off
Saturation
Output Characteristics
Channel Length Modulation
Transfer Characteristics and Depletion Mode MOSFET
P-channel MOSFET (PMOS)
IEEE Standard MOS Transistor Circuit Symbols
Summary of MOS Equations
MOS Capacitances - Linear Region
MOS Capacitances - Saturation
MOS Capacitances - Cutoff
Small-Signal Models for Field-Effect Transistors (I)
Small-Signal Models for Field-Effect Transistors
Body Effect in the Four-Terminal MOSFET
High-Frequency MOSFET Small Signal Model
High-Frequency MOSFET Small Signal Model
Physical Structure of Bipolar Junction Transistor (BJT): Simplified Cross Section
Diode Principle
NPN-BJT Principle (I)
NPN-BJT Principle (II)
Total Terminal Currents
Equivalent Circuit
Regions of Operation of the Bipolar Transistor
Simplified Model of BJT Currents
Simplified Model for the npn transistor for the forward-active region
Further simplification of the npn model for the forward-active region
Simplified Model for the npn Transistor in Saturation
Output Characteristics
BJT Transfer Characteristics in the Forward-Active Region
Early Effect
Early Effect (II)
BJT Capacitances
Frequency Dependent Current Gain
Transconductance
Small-Signal Models for Bipolar Junction Transistors (I)
Small-Signal Models for Bipolar Junction Transistors (II)
Summary and Comparison of the Small-Signal Models of the BJT and FET (I)
Summary and Comparison of the Small-Signal Models of the BJT and FET (II)
Example: Common-Collector Amplifier
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