PUBLICATIONS OF M.J. AZIZ

last updated 09/23/08 Entire manuscripts are available for most publications in pdf format.  Those in manuscript form may differ slightly from the final published version. 

In general, this page may not be updated as frequently as manuscripts are deposited here, so you might find newer ones than those listed by pointing your browser to the directory listing at http://seas.harvard.edu/matsci/people/aziz/publications/?C=N;O=D

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187. T. Kim, M.J. Aziz, and V. Narayanamurti, "Two Dimensionally Patterned GaNxAs1 - x/GaAs Nanostructures Using N+ Implantation Followed by Pulsed Laser Melting", Appl. Phys. Lett. 93, 102117 (2008). (Link to AIP abstract, copyright)

186. H.B. George, B. Davidovitch, M.P. Brenner, and M.J. Aziz, "Non-Local Processes Impact Ion Sputter Erosion Morphology", submitted to Phys. Rev. Lett. (03-Dec-2007).

185. M.J. Aziz, "Film Growth Mechanisms in Pulsed Laser Deposition", invited review paper for COLA'07 (Conference on Laser Ablation), submitted to Applied Physics A

184. K.Z. House, C.H. House, D.P. Schrag, and M.J. Aziz, "Electrochemical Acceleration of Chemical Weathering as an Energetically Feasible Approach to Mitigating Anthropogenic Climate Change", Environmental Science and Technology 41, 8464 (2007) .

183.   M. Tabbal, T.G. Kim, J.M. Warrender, M.J. Aziz, B.L. Cardozo and R.S. Goldman, "Formation of single crystal sulfur supersaturated silicon based junctions by pulsed laser melting", J. Vac. Sci. Technol. B , in press (2007).

182.   M. Tabbal, M.J. Aziz, C. Madi, S. Charnvanichborikarn, J.S. Williams, and T.C. Christidis, "Excimer laser processing of novel materials for optoelectronic and spintronic applications", in Photon Processing in Microelectronics and Photonics VI , eds. C.B. Arnold, T. Okada, M. Meunier, A.S. Holmes, D.B. Geohegan, F. Träger, and J.J. Dubowski, Proc. SPIE 6458 (SPIE, Bellingham, WA, 2007), 645803.

181.  B. Davidovitch, M.J. Aziz, and M.P. Brenner, "On the Stabilization of Ion Sputtered Surfaces", Phys. Rev. B , in press (2007).

180.  B. Shin and M.J. Aziz, "Kinetic energy induced smoothening and delay of epitaxial breakdown in pulsed laser deposition", Phys. Rev. B 76 , 085431 (2007).

179.  J.M. Warrender and M.J. Aziz, "Effect of Deposition Rate on Morphology Evolution of Metal-on-Insulator Films Grown by Pulsed Laser Deposition", Phys. Rev. B , 76 , 045414 (2007).

178.  B. Shin and M.J. Aziz, "Modeling RHEED intensity oscillations in multi-layer epitaxy: Determination of the Ehrlich-Schwoebel barrier in Ge(001) homoepitaxy", Phys. Rev. B 76 , 165408 (2007).

177.  J.M. Warrender and M.J. Aziz, "Kinetic Energy Effects on Morphology Evolution during Pulsed Laser Deposition of Metal-on-Insulator Films", Phys. Rev. B 75 , 085433 (2007).

176.   D.P. Adams, M.J. Aziz, G. Hobler, W.J. MoberlyChan, T. Schenkel, "Fundamentals of FIB Nanostructural Processing:  Below, At and Above the Surface", MRS Bulletin 32 (5), 424-32 (2007).

175.   J. Bao, M. Tabbal, T. Kim, S. Charnvanichborikarn, J.S. Williams, M.J. Aziz and F. Capasso, "Point Defect Engineered Si Sub-Bandgap Light-emitting Diode", Optics Express 15 , 6727 (2007).

174.   D. Margetis, P.-W. Fok, M.J. Aziz, and H.A. Stone, "Continuum Theory of Nanostructure Decay via a Microscale Condition", Phys. Rev. Lett. 97 , 096102 (2006).

173.  M.J. Aziz, "Nanoscale Morphology Control Using Ion Beams", Matematisk-Fysiske Meddelelser / udg. af Det Kongelige Danske Videnskabernes Selskab 52 , 187 (2006); Ion'06 Proceedings, Ed. P. Sigmund.

172.  B. Shin, J.P. Leonard, J.W. McCamy and M.J. Aziz, "On the Phase Shift of Reflection High Energy Electron Diffraction Intensity Oscillations during Ge(001) Homoepitaxy by Molecular Beam Epitaxy", Journal of Vacuum Science and Technology A 25 , 221 (2007).

171. J.F. Sage, W. Barvosa-Carter and M.J. Aziz, "Strain-Stabilized Solid Phase Epitaxy of Si-Ge on Si", Journal of Applied Physics 99 , 113529 (2006) .

170. Y.-R. Kim, P. Chen, M.J. Aziz, D. Branton, and J.J. Vlassak, "Focused Ion Beam Induced Deflections of Freestanding Thin Films", Journal of Applied Physics 100 , 104322 (2006).

169. T.G. Kim, J.M. Warrender, and M.J. Aziz, "Strong Sub-Bandgap Infrared Absorption in Silicon Supersaturated with Sulfur", Applied Physics Letters 88 , 241902 (2006).

168. K. Otani, X. Chen, J.W. Hutchinson, J.F. Chervinsky, and M.J. Aziz, "Three Dimensional Morphology Evolution of SiO 2 Patterned Films Under MeV Ion Irradiation", Journal of Applied Physics 100 , 023535 (2006).

167. H.B. George, A.-D. Brown, M.R. McGrath, J. Erlebacher, and M.J. Aziz, "Quantifying the order of spontaneous ripple patterns on ion-irradiated Si(111)", Mater. Res. Soc. Symp. Proc. 908E , OO2.4 (2005).

166. M.J. Aziz, Y. Zhao, H.-J. Gossmann, S. Mitha, S.P. Smith, and D. Schiferl, "Pressure and stress effects on B and Sb diffusion in Si and Si-Ge alloys", Phys. Rev. B 73 , 054101 (2006).

165. H.H. Chen, O.A. Urquidez, S. Ichim, L. Humberto Rodriguez, M.P. Brenner and M.J. Aziz, "Shocks in Ion Sputtering Sharpen Steep Surface Features", Science 310 , 294 (2005).

164. B. Shin, J.P. Leonard, J.W. McCamy and M.J. Aziz, "Comparison of Morphology Evolution of Ge(001) Homoepitaxial Films Grown by Pulsed Laser Deposition and Molecular Beam Epitaxy", Applied Physics Letters 87 , 181916 (2005).

163. A. Cuenat, H.B. George, K.-C. Chang, J.M. Blakely and M.J. Aziz, "Lateral Templating for Guided Self-Organization of Sputter Morphologies", Advanced Materials 17 , 2845 (2005).

162. M.J. Aziz, "Introduction to "A Treatment of the Solute Drag on Moving Grain Boundaries and Phase Interfaces in Binary Alloys", by M. Hillert and B. Sundman", to appear in Selected Works of Mats Hillert , edited by J. Agren, Y. Brechet, C. Hutchinson, J. Philibert, and G. Purdy (2005).

161. V. Ramaswamy, T.E. Haynes, C.W. White, W.J. MoberlyChan, S. Roorda, M.J. Aziz, "Synthesis of Nearly Monodisperse Embedded Nanoparticles by Separating Nucleation and Growth in Ion Implantation", Nano Letters 5 , 373-377 (2005)

160. C.B. Arnold and M.J. Aziz, "Unified Kinetic Model of Dopant Segregation during Vapor Phase Growth", Physical Review B 72 , 195419 (2005).

159. Y. Zhao, M.J. Aziz, N.R. Zangenberg, and A. N. Larsen, "Activation volume for phosphorus diffusion in silicon and Si 0.93 Ge 0.07 ", Applied Physics Letters 86 , 141902-141904 (2005)

158. H.A. Stone, D. Margetis and M.J. Aziz, "Grooving of a Grain Boundary by Evaporation-Condensation below the Roughening Transition", J. Appl. Phys. 97 , 113535 (2005).

157. S. Ichim and M.J. Aziz, "Lateral templating of self-organized ripple morphologies during focused ion beam milling of Ge", Journal of Vacuum Science and Technology B 23 , 1068-1071 (2005) .

156. J.P. Leonard, M.J. Aziz, T.J. Renk, and M.O. Thompson, "Solute diffusion in liquid nickel measured by pulsed ion beam melting ", Metall. Trans. A 35 , 2803-07 (2004).

155. A.D. Brown, H.B .George, M.J. Aziz and J.D. Erlebacher, "One and Two-Dimensional Pattern Formation on Ion Sputtered Silicon", Materials Research Society Symposium Proceedings 792 , R7.8 (2004).

154. D. Margetis, M.J. Aziz, and H.A. Stone, "Continuum Approach to Self-Similarity and Scaling in Nanostructure Decay", Phys. Rev. B 71 , 165432 (2005).

153. C.B. Arnold and M.J. Aziz, "Kinetic Modeling of Dopant and Impurity Surface Segregation During Vapor Phase Growth: Multiple Mechanism Approach", Materials Research Society Symposia Proceedings 749 , W14.3 (2003).

152. J.M. Warrender and M.J. Aziz, “Evolution of Ag Nanocrystal Films Grown by Pulsed Laser Deposition”, Applied Physics A 79 , 713-716 (2004).

151. W. Barvosa-Carter, M.J. Aziz, A.-V. Phan, T. Kaplan and L.J. Gray, "Interfacial Roughening During Solid Phase Epitaxy: Interaction of Dopant, Stress, and Anisotropy Effects ", Journal of Applied Physics 96 , 5462-5468 (2004).

150. M.J. Aziz, “Tests of Theories for Nonplanar Growth During Rapid Alloy Solidification”, in Solidification Processes and Microstructures : a Symposium in Honor to Wiflried Kurz , Eds. M. Rappaz et al. (TMS, Warrendale, PA), in press (2004).

149. K.M. Yu, W. Walukiewicz, M.A. Scarpulla, O.D. Dubon, J. Wu, J. Jasinski, Z. Liliental-Weber, J.W. Beeman, M.R. Pillai and M.J. Aziz, “Synthesis of GaN x As 1-x thin films by pulsed laser melting and rapid thermal annealing of N + -implanted GaAs”, Journal of Applied Physics 94 , 1043-1049 (2003).

148. C.H. Crouch, J.E. Carey, J.M. Warrender, M.J. Aziz, and E. Mazur, "Comparison of structure and properties of femtosecond and nanosecond laser-structured silicon", Applied Physics Letters 84 , 1850 (2004).

147. M.J. Aziz,."Dopant Diffusion under Pressure and Stress", Proceedings of 2003 International Conference on Simulation of Semiconductor Processes and Devices, Cambridge MA , September 2003. [C27,C30]

146. D. Margetis, M.J. Aziz, and H.A. Stone, "Continuum Description of Profile Scaling in Nanostructure Decay", Physical Review B 69 , 041404 (2004).

145. W. Zhou, A. Cuenat and M.J. Aziz, "Formation of Self-organized Nanostructures on Ge During Focused Ion Beam Sputtering", in Microscopy of Semiconducting Materials 2003: Proceedings of the 13th International Conference on Microscopy of Semiconducting Materials , eds. A. G. Cullis and P. A. Midgley (Institute of Physics and IOP Publishing Limited, 2003) .

144. E. Chason and M.J. Aziz, "Spontaneous Formation of Patterns on Sputtered Surfaces" Scripta Materialia , 49 , 953 (2003). [O4]

143. J.M. Warrender and M.J. Aziz, “Morphological Evolution of Ag/Mica Films Grown by Pulsed Laser Deposition”, Materials Research Society Symposium Proceedings 749 , W.3.1 (2003).

142. J.P. Leonard, B. Shin, J.W. McCamy, and M.J. Aziz, “Comparison of Growth Morphology in Ge (001) Homoepitaxy Using Pulsed Laser Deposition and MBE”, Materials Research Society Symposium Proceedings 749 , W16.11 (2003).

141. M.A. Scarpulla, O.D. Dubon, K.M. Yu, O. Monteiro, M. Pillai, M.J. Aziz, and M.C. Ridgway, "Ferromagnetic Ga 1-x Mn x As Films Produced by Ion Implantation and Pulsed Laser Melting", Applied Physics Letters 82 , 1251-1253 (2003).

140. K.M. Yu, W. Walukiewicz , J.W. Beeman, M.A. Scarpulla, O.D. Dubon, M.R. Pillai and M.J. Aziz, "Enhanced Nitrogen Incorporation by Pulsed Laser Melting of GaN x As 1-x Formed by N Implantation", Applied Physics Letters 80 , 3958-3960 (2002).

139. A.-V. Phan, T. Kaplan, L.J. Gray, W. Barvosa-Carter and M.J. Aziz, "Modeling a Growth Instability in Stressed Boron Doped Silicon", Proceedings of Fifth International Conference on Modeling and Simulation of Microsystems (2002).

138. A. Cuenat and M.J. Aziz, "Spontaneous Pattern Formation from Focused and Unfocused Ion Beam Irradiation", Materials Research Society Symposium Proceedings 696 , N2.8.1-N2.8.6 (2002).

137. P.G. Evans, O.D. Dubon, J.F. Chervinsky, M.J. Aziz, F. Spaepen, and J.A. Golovchenko, "Growth and Evaporation of Pb Layers on As-Terminated Si(111)", submitted to Applied Physics Letter.

136. J. Li, D. Stein, C. McMullan, D. Branton, M.J. Aziz, and J. Golovchenko, "Ion-Beam Sculpting at Nanometre Length Scales", Nature412, 166 (12 July 2001).

135. A.-V. Phan, T. Kaplan, L.J. Gray, D. Adalsteinsson, J.A. Sethian, W. Barvosa-Carter and M.J. Aziz, "Modeling a Growth Instability in a Stressed Solid", Modelling and Simulation in Materials Science and Engineering 9, 309 (2001).

134. C.B. Arnold and M.J. Aziz, "Model for Dopant and Impurity Segregation during Vapor Phase Growth", Materials Research Society Symposia Proceedings 648 (in press, 2001).

133. Y. Huang, M.J. Aziz, J.W. Hutchinson, A.G. Evans, R. Saha and W.D. Nix, "Comparison of Mechanical Properties of Ni3Al Thin Films in Disordered FCC and Ordered L12 Phases", Acta Materialia (in press, 2001).

132. W. Barvosa-Carter and M.J. Aziz, "Time-Resolved Measurements of Stress Effects on Solid-Phase Epitaxy of Intrinsic and Doped Si",  Appl. Phys. Lett. 79, 356 (2001).

131. J.D. Erlebacher, M.J. Aziz, A. Karma, N. Dmitrov, and K. Sieradzki, " Evolution of Nanoporosity in Dealloying ", Nature410, 450 (March 22, 2001).

130. E. Chason, J. Erlebacher, M.J. Aziz, J.A. Floro and M.B. Sinclair, "Dynamics of Pattern Formation During Low Energy Ion Bombardment of Si(001)", Nucl. Instrum. Meth. B 178, 55 (2001).

129. D. Turnbull and M.J. Aziz, "The Tetrahedral Motif in Metal Structures", in The Science of Alloys for the 21st Century: A Hume-Rothery Celebration, eds. E.A. Turchi, R.D. Shull and A. Gonis, TMS - The Minerals, Metals & Materials Society (2000), p. 179.

128. M.J. Aziz, "On Kinetically vs. Energetically Driven Growth Instabilities in Solid and Vapor Phase Epitaxy", Proceedings of Spring 2000 MRS Symposium K, Morphological and Compositional Evolution of Heteroepitaxial Semiconductor Thin Films, MRS Symp. Proc. 618, 233 (2000).

127. O. D. Dubon, P. G. Evans, M. F. Chisholm, D. A. Muller, J. F. Chervinsky, M. J. Aziz, F. Spaepen, and J. A. Golovchenko, "Doping by metal-mediated epitaxy:  growth of As delta-doped Si through a Pb monolayer", Appl. Phys. Lett.78, 1505 (2001).

126. P.G. Sanders and M.J. Aziz, "Terrestrial Measurements of Diffusivities in Refractory Melts by Pulsed Melting of Thin Films", Proceedings of the 2000 Microgravity Materials Science Conference, Huntsville, AL; National Space and Aeronautics Administration, Washington DC (2000).

125. J.A. Kittl, P.G. Sanders, M.J. Aziz, D.P. Brunco and M.O. Thompson, "Complete Experimental Test for Kinetic Models of Rapid Alloy Solidification", Acta Materialia 48, 4797 (2000).

124. J.F. Sage, W. Barvosa-Carter, and M.J. Aziz, "Morphological Instability of Growth Fronts Due to Stress-Induced Mobility Variations", Applied Physics Letters 77, 516 (2000).

123. P.W. Voorhees and M. J. Aziz, "The Effects of a Stress-Dependent Mobility on Interfacial Stability", to appear in Proceedings of the Conference on Interfaces for the Twenty-First Century, August 16-18, 1999, Monterey, CA, eds. Marc K. Smith and G.B. McFadden (Imperial College Press, 2000).

122. P. G. Sanders, M. O. Thompson, T. J. Renk, and M. J. Aziz, " Liquid Titanium Solute Diffusion Measured by Pulsed Ion-Beam Melting ", accepted for publication in  Met. Mat. Trans. A (2000).

121. C.B. Arnold and M.J. Aziz, "Stoichiometry Issues in Pulsed Laser Deposition of Alloys Grown from Multicomponent Targets", Applied Physics A 69, 23 (1999).

120. M.J. Aziz, "Stress Effects on Defects and Dopant Diffusion in Si", invited review for Materials Science in Semiconductor Processing (submitted August 1999, accepted for publication but no response from editor Salvo Coffa on when this will actually appear in print).

119. T. Yoshida, Y. Yamada, N. Suzuki, T. Makino, T. Orii, K. Murakami, D.B. Geohegan, D.H. Lowndes, and M.J. Aziz, "Crystallinities and Light Emitting Properties of Nanostructured SiGe Alloy Prepared by Pulsed Laser Ablation in Inert Background Gases", Proceedings of SPIE Vol. 3618, Paper #68 (1999).

118. P.G. Sanders and M.J. Aziz, "Self-Diffusivity of Liquid Silicon Measured by Pulsed Laser Melting", J. Appl. Phys. 86, 4258 (1999).

117. J.D. Erlebacher, M.J. Aziz, E. Chason, M.B. Sinclair, and J.A. Floro, "Non-Classical Smoothening of Nano-Scale Surface Corrugations", Physical Review  Letters 84, 5800 (2000).

Reviews and response to reviewers' comments contain interesting and relevant information, most of which will be published eventually, but is provided here in the interim

116. R.C. Newman, S.G. Corcoran, J.D. Erlebacher, M.J. Aziz and K. Sieradzki, "Alloy Corrosion", MRS Bulletin 74 (7), 24 (July 1999).

115. O.D. Dubon, P.G. Evans, J.F. Chervinsky, F. Spaepen, M.J. Aziz, and J.A. Golovchenko, "Low-Temperature Si(111) Homoepitaxy and Doping Mediated by a Monolayer of Pb", Mater. Res. Soc. Symp. Proc. 570 , 45 (1999).

114. N. Bernstein, M.J. Aziz, and E. Kaxiras, "Atomistic Simulations of Solid Phase Epitaxy in Silicon", in Phys. Rev. B. 61, 6696 (2000).

113. J.D. Erlebacher, M.J. Aziz, E. Chason, M.B. Sinclair, and J.A. Floro, "Nonlinear Amplitude Evolution During Spontaneous Patterning of Ion-Bombarded Si(001)", Journal of Vacuum Science and Technology A 18, 115 (2000).

112. Y. Zhao, M.J. Aziz, H.-J. Gossmann, S. Mitha and D. Schiferl, "Activation Volume for Antimony Diffusion in Silicon and Implications for Strained Films", Appl. Phys. Lett 75, 941 (1999).

111. J.D. Erlebacher, E.H. Chason, M.B. Sinclair, J.A. Floro, and M.J. Aziz, "Spontaneous Pattern Formation on Ion Bombarded Si(001)", Phys. Rev. Lett. 82, 2330 (1999).

110. Y. Zhao, M.J. Aziz, H.-J. Gossmann, S. Mitha and D. Schiferl, "Activation Volume for Boron Diffusion in Silicon and Implications for Strained Films", Appl. Phys. Lett.74, 31-33 (1999).

109. M.J. Aziz and F. Spaepen, "Test of Dendrite Growth Theory and Nucleation of Polytetrahedral Phases from the Melt", Proceedings of the 1998 Microgravity Materials Science Conference, Huntsville, AL; National Space and Aeronautics Administration, Washington DC (1998).

108.  M.J. Aziz, "Introduction to 'The Molecular Mechanism of Solidification', by J.W. Cahn, W.B. Hillig and G.W. Sears", in The Selected Works of John W. Cahn, eds. W.C. Johnson and W.C. Carter (TMS-AIME, Warrendale, PA, 1998), pp. 207-9.

107. C.B. Arnold, M.J. Aziz, M. Schwarz and D.M. Herlach, "Parameter-Free Test of Alloy Dendrite Growth Theory", Physical Review B 59, 334-343 (1999).

106. W. Barvosa-Carter, M.J. Aziz, L.J. Gray and T. Kaplan, "Kinetically Driven Growth Instability in Stressed Solids", Physical Review Letters81, 1445 (1998).

105. N. Bernstein, M.J. Aziz, and E. Kaxiras, "Atomistic Features of the Amorphous-Crystal Interface in Silicon", Journal of Computer Aided Materials Design 5, 55 (1998).

104. N. Bernstein, M.J. Aziz, and E. Kaxiras, "The Amorphous-Crystal Interface in Silicon: a Tight-Binding Simulation", Physical Review B58, 4579 (1998).

103. M.J. Aziz, "Pressure and Stress Effects on Diffusion in Si", Defect and Diffusion Forum 153-155, 1-10 (1998).

102. D.E. Hoglund, M.O. Thompson and M.J. Aziz, "Experimental Test of Morphological Stability Theory for a Planar Interface during Rapid Solidification", Phys. Rev. B 58, 189 (1998).

101. Y. Zhao, W. Barvosa-Carter, S.D. Theiss, S. Mitha, M.J. Aziz and D. Schiferl, "Pressure Measurement at High Temperature using Ten Sm:YAG Fluorescence Peaks", Journal of Applied Physics 84, 4049 (1998).

100. M.J. Aziz, S. Circone and C.B. Agee, "Vanishing Atomic Migration Barrier in SiO2", Nature390, 596 (1997).

99. M.J. Aziz, "Nonhydrostatic Stress Effects on Boron Diffusion in Si", Materials Research Society Symposia Proceedings 469, 37 (1997).

98. J.A. Kittl, M.J. Aziz, D.P. Brunco and M.O. Thompson, "Time-Resolved Temperature Measurements During Pulsed Laser Irradiation", Proceedings of the Annual Meeting of the IEEE Lasers and Electro-Optics Society Nov 15-18 1993, San Jose, CA (IEEE, Piscataway NJ, 1973), ISBN: 0-7803-1263-5, pp 774-775.

97. J.W. McCamy and M.J. Aziz, "Time-resolved RHEED Studies of the Growth of Epitaxial ZnSe Films on GaAs by Pulsed Laser Deposition", Materials Research Society Symposia Proceedings 441, 621 (1997).

96. J.D. Erlebacher and M.J. Aziz, "Surface Relaxation Mechanisms in the Morphological Equilibration of Crystal Surfaces", Materials Research Society Symposia Proceedings 440, 59 (1997).

95. J.D. Erlebacher and M.J. Aziz, "Ion-Sputter Induced Rippling of Si(111)", Materials Research Society Symposia Proceedings 440, 461 (1997).

94. W. Barvosa-Carter and M.J. Aziz, "Effect of Non-Hydrostatic Stress on Kinetics and Interfacial Roughness during Solid Phase Epitaxial Growth in Si", Materials Research Society Symposia Proceedings 441, 621 (1997).

93. Y. Zhao, M.J. Aziz, S. Mitha and D. Schiferl, "Effect of Pressure on Boron Diffusion in Silicon", Materials Research Society Symposia Proceedings 442, 305 (1997).

92. M.J. Aziz, "Thermodynamics of Diffusion under Pressure and Stress: Relation to Point Defect Mechanisms", Applied Physics Letters 70, 2810 (1997).

91. M. Schwarz, C.B. Arnold, M.J. Aziz and D.M. Herlach, "Dendritic Growth Velocity and Diffusive Speed in Solidification of Undercooled Dilute Ni-Zr Melts", Materials Science and Engineering A 226-228, 420 (1997).

90. S. Mitha, M.J. Aziz, D. Schiferl and D.B. Poker, "Effect of Pressure on As Diffusion in Ge: Evidence Against   Simple Vacancy Mechanism", Defect and Diffusion Forum 143-147, 1041 (1997).

89. A.J. Stevens, T. Koga, C.B. Agee, M.J. Aziz, and C.M. Lieber, "Stability of Carbon Nitride Materials at High Pressure and Temperature", J. Am. Chem. Soc. 118, 10900-10901 (1996).

88. M.J. Aziz, "Experimental Constraints on Nonequilibrium Interface Kinetic Models", Materials Science and Engineering A 226-228, 255 (1997).

87. S. Mitha, M.J. Aziz, D. Schiferl, and D.B. Poker, "Activation Volume for Arsenic Diffusion in Germanium", Applied Physics Letters 69, 922 (1996).

86. J.D. Erlebacher and M.J. Aziz, "Morphological Equilibration of Rippled and Dimpled Crystal Surfaces: the Role of Terrace-Width Fluctuations", Surface Science 374, 427 (1997).

85. C.W. White, J.D. Budai, J.G. Zhu, S.P. Withrow, and M.J. Aziz, "Ion Beam Synthesis and Stability of GaAs Nanoclusters in Silicon", Applied Physics Letters, 68, 2389 (1996)

84. J.A. Kittl, M.J. Aziz, D.P. Brunco and M.O. Thompson, "Test of Kinetic Models for Interface Velocity, Temperature, and Solute Trapping in Rapid Solidification", Materials Research Society Symposia Proceedings, 398, 119-126 (1996).

83. S.D. Theiss, F. Spaepen, M.J. Aziz, "Pressure-Enhanced Interdiffusion in Amorphous Si/Ge Multilayers", Appl. Phys. Lett. 68, 1226 (1996).

82. S.D. Theiss, F. Spaepen, M.J. Aziz, "Pressure-Enhanced Interdiffusion in Amorphous Si/Ge Multilayers: Implications for Defect-Mediated Diffusion," Materials Research Society Symposia Proceedings 356, 15 (1995).

81. M.J. Aziz, "Interface Attachment Kinetics in Alloy Solidification", Metallurgical & Materials Transactions A 27, 671-686 (1996).

80. W.B. Carter and M.J. Aziz, "Nonhydrostatic Stress Effects on Solid Phase Epitaxial Growth in Silicon", Materials Research Society Symposia Proceedings, 356, 87 (1995).

79. D.P. Brunco, M.O. Thompson, D.E. Hoglund, M.J. Aziz and H.-J. Gossmann, "Germanium Partitioning in Silicon During Rapid Solidification," Journal of Applied Physics78, 1575-1582 (1995).

78. D.P. Brunco, M.O. Thompson, D.E. Hoglund and M.J. Aziz, "Germanium Partitioning and Interface Stability During Rapid Solidification of GeSi Alloys," Materials Research Society Symposia Proceedings, 354, 653 (1995).

77. J.A. Kittl, M.J. Aziz, D.P. Brunco and M.O. Thompson, "Nonequilibrium Partitioning During Rapid Solidification of Si-As Alloys", Journal of Crystal Growth148, 172-182 (1995).

76. M.J. Aziz, "Solidification - Rapid Growth Kinetics", Encyclopedia of Advanced Materials (Pergamon Press, Oxford, 1994), pp. 2187-2194.

75. R. Reitano, P.M. Smith and M.J. Aziz, "Solute Trapping of Group III, IV, and V Elements in Silicon by an Aperiodic Stepwise Growth Mechanism," Journal of Applied Physics 76, 1518 (1994).

74. N. Isono, P.M. Smith, D. Turnbull, and M.J. Aziz, "Anomalous Diffusion of Fe in Liquid Al Measured by the Pulsed Laser Technique", Metallurgical & Materials Transactions A 27, 725-730 (1996).

73. P.M. Smith and M.J. Aziz, "Solute Trapping in Aluminum Alloys", Acta Metallurgica et Materialia 42, 3515 (1994).

72. S. Mitha, S.D. Theiss, M.J. Aziz, D. Schiferl and D.B. Poker, "Effect of Pressure on Arsenic Diffusion in Germanium", Materials Research Society Symposia Proceedings325, 189 (1994).

71. S.D. Theiss, S. Mitha, F. Spaepen and M.J. Aziz, "Interdiffusion of Amorphous Si/Ge Multilayers Under Hydrostatic Pressure", Materials Research Society Symposia Proceedings321, 59 (1994).

70. R.Reitano, P.M. Smith and M.J. Aziz, "Trends in Solute Segregation Behavior During Silicon Solidification", Materials Research Society Symposia Proceedings321, 479 (1994).

69. M.J. Aziz, "Questions and Answers on the Activation Strain", Materials Research Society Symposia Proceedings 321, 449 (1994).

68. M.J. Aziz, "Nonequilibrium Interface Kinetics During Rapid Solidification", Materials Science and Engineering A178, 167-170 (1994).

67. J.A. Kittl, M.J. Aziz, D.P. Brunco and M.O. Thompson, "Absence of Solute Drag in Solidification", Applied Physics Letters 64, 2359 (1994).

66. M.J. Aziz and W.J. Boettinger, "On the Transition from Short-Range Diffusion-Limited to Collision-Limited Growth in Alloy Solidification", Acta Metallurgica et Materialia42, 527-537 (1994).

65. D.P. Brunco, J.A. Kittl, C.E. Otis, P.M. Goodwin, M.O. Thompson and M.J. Aziz, "Time-resolved Temperature Measurements During Pulsed Laser Irradiation Using Thin Film Metal Thermistors", Review of Scientific Instruments 64, 2615-2623 (1993).

64. K. Eckler, D.M. Herlach and M.J. Aziz, "Search for a Solute-Drag Effect in Dendritic Solidification", Acta Metallurgica et Materialia 42, 975-979 (1994).

63. T. Kaplan, M.J. Aziz and L.J. Gray, "Restricted Applicability of Onsager's Reciprocity Relations to Models of Interface Motion", Journal of Chemical Physics99, 8031-8037 (1993).

62. J.A. Kittl, R. Reitano, M.J. Aziz, D.P. Brunco and M.O. Thompson, "Congruent Melting Temperatures of Si-As Alloys Measured During Pulsed-Laser Melting and Rapid Solidification", Materials Research Society Symposia Proceedings279, 691-697 (1993).

61. P.M. Smith, R. Reitano and M.J. Aziz, "Solute Trapping in Metals", Materials Research Society Symposia Proceedings 279, 749-755 (1993).

60. J.A. Kittl, R. Reitano, M.J. Aziz, D.P. Brunco and M.O. Thompson, "Time-Resolved Temperature Measurements During Rapid Solidification of Si-As Alloys Induced by Pulsed-Laser Melting", Journal of Applied Physics 73, 3725-3733 (1993).

59. J.A. West and M.J. Aziz, "Kinetic Disordering of Intermetallic Compounds by Rapid Solidification", The Metallurgical Society Symposia Proceedings, Kinetics of Ordering Transformations in Metals, edited by H. Chen and V.K. Vasudevan (TMS, Warrendale, PA, 1992), pp. 177-184.

58. J.W. Elmer, M.J. Aziz, L.E. Tanner, P.M. Smith and M.A. Wall, "Formation of Bands of Ultrafine Beryllium Particles During Rapid Solidification of Al-Be Alloys: Modeling and Direct Observations", Acta Metallurgica et Materialia 42, 1065-1080 (1994).

57. J.A. West and M.J. Aziz, "Kinetic Disordering of Intermetallic Compounds Through First- and Second-Order Transitions by Rapid Solidification", in Ordering and Disordering in Alloys, edited by A.-R. Yavari (Elsevier, London, 1992), pp. 23-30.

56. M.J. Aziz, "The Mechanism of Solid Phase Epitaxy", in Crucial Issues in Semiconductor Materials and Processing Technologies, edited by S. Coffa, F. Priolo, E. Rimini and J.M. Poate, NATO ASI Series (Kluwer, Dordrecht, The Netherlands 1992), pp. 465-476.

55. G.-Q. Lu, E. Nygren and M.J. Aziz, "Pressure-Enhanced Crystallization Kinetics of Amorphous Si and Ge: Implications for Point Defect Mechanisms", Journal of Applied Physics 70, 5323-5345 (1991).

54. P.M. Smith, J.A. West and M.J. Aziz, "Solute Trapping of Ge in Al", Materials Research Society Symposia Proceedings 205, 331-336 (1992).

53. M.J. Aziz, P.C. Sabin and G.-Q. Lu, "Effect of Nonhydrostatic Stress on Crystal Growth Kinetics", Materials Research Society Symposia Proceedings202, 567-572 (1991).

52. K.-R. Lee, J.A. West, P.M. Smith, M.J. Aziz and J.A. Knapp, "Measurements of To Temperatures of Supersaturated Si-As Alloys", Materials Research Society Symposia Proceedings 205, 301-306 (1992).

51. D.E. Hoglund and M.J. Aziz, "Interface Stability During Rapid Directional Solidification", Materials Research Society Symposia Proceedings205, 325-329 (1992).

50. G.-Q. Lu, E. Nygren and M.J. Aziz, "Pressure-Enhanced Solid Phase Epitaxy: Implications for Point Defect Mechanisms", Materials Research Society Symposia Proceedings205, 33-38 (1992).

49. M.J. Aziz, P.C. Sabin and G.-Q. Lu, "The Activation Strain Tensor: Nonhydrostatic Stress Effects on Crystal Growth Kinetics", Physical Review B 44, 9812-9816 (1991).

48. J.A. West, J.T. Manos and M.J. Aziz, "Formation of Metastable Disordered Ni3Al by Pulsed Laser-Induced Rapid Solidification", Materials Research Society Symposia Proceedings 213, 859-864 (1991).

47. G. Devaud, C. Hayzelden, M.J. Aziz and D. Turnbull, "Growth of Quartz from Amorphous Silica at Ambient Pressure", Journal of Non-Crystalline Solids134, 129-132 (1991); erratum 149, 283 (1992).

46. D.E. Hoglund, M.J. Aziz, S.R. Stiffler, M.O. Thompson, J.Y. Tsao and P.S. Peercy, "Effect of Nonequilibrium Interface Kinetics on Cellular Breakdown of Planar Interface During Rapid Solidification of Si-Sn", Journal of Crystal Growth109, 107-112 (1991).

45. W.J. Boettinger, L.A. Bendersky, J.A. West, M.J. Aziz and J. Cline, "Disorder Trapping in Ni2TiAl", Materials Science and EngineeringA133, 592-595 (1991).

44. E. Chason and M.J. Aziz, "Effect of Pressure on Crystallization Kinetics of Cordierite Glass", Journal of Non-Crystalline Solids 130, 204-210 (1991).

43. H.A. Atwater, J.A. West, P.M. Smith, M.J. Aziz, J.Y. Tsao, P.S. Peercy and M.O. Thompson, "Time-Resolved Measurements of Solidification and Undercooling in Metals and Alloys", Materials Research Society Symposia Proceedings157, 369-375 (1990).

42. G.-Q. Lu, E. Nygren, M.J. Aziz, D. Turnbull and C.W. White, "Pressure-Enhanced Solid Phase Epitaxy of Ge", Applied Physics Letters 56, 137-139 (1990).

41. G.-Q. Lu, E. Nygren, M.J. Aziz, D. Turnbull and C.W. White, "Interferometric Measurement of the Pressure-Enhanced Crystallization Rate of Amorphous Si," Applied Physics Letters 54, 2583-2585 (1989).

40. M.J. Aziz and D. Turnbull, "Crystal Growth: Growth Processes", in Encyclopedia of Science & Technology (McGraw-Hill, New York, 1992), pp. 588-589.

39. W.J. Boettinger and M.J. Aziz, "Theory for the Trapping of Disorder and Solute in Intermetallic Phases by Rapid Solidification", Acta Metallurgica37, 3379-3391 (1989).

38. G. Devaud, M.J. Aziz and D. Turnbull, "High Pressure Crystallization of As2S3", Journal of Non-Crystalline Solids 109, 121-128 (1989).

37. G.-Q. Lu, E. Nygren, M.J. Aziz, D. Turnbull and C.W. White, "Time-Resolved Reflectivity Measurement of the Pressure-Enhanced Crystallization Rate of Amorphous Si in a Diamond Anvil Cell", Materials Research Society Symposia Proceedings 100, 435-440 (1988).

36. J.Y. Tsao, M.J. Aziz, P.S. Peercy and M.O. Thompson, "Interface Velocity Transients During the Melting of a-Si/c-Si Thin Films", Materials Research Society Symposia Proceedings 100, 519-524 (1988).

35. M.J. Aziz, "Nonequilibrium Interface Kinetics During Rapid Solidification: Theory and Experiment", Materials Science and Engineering 98, 369-372 (1988).

34. C.W. White, L.A. Boatner, P.S. Sklad, C.J. McHargue, J. Rankin, G.C. Farlow and M.J. Aziz, "Ion Implantation and Annealing of Crystalline Oxides and Ceramic Materials", Nuclear Instruments and Methods B32, 11-22 (1988).

33. C.W. White, L.A. Boatner, J. Rankin and M.J. Aziz, "Ion Implantation and Annealing of SrTiO3 and CaTiO3", Materials Research Society Symposia Proceedings 93, 9-14 (1987).

32. T. Kaplan, M.J. Aziz and L.J. Gray, "Application of Onsager's Reciprocity Relations to Interface Motion During Phase Transformations", Journal of Chemical Physics 90, 1133-1140 (1989).

31. C.W. White, L.A. Boatner, P.S. Sklad, C.J. McHargue, S.J. Pennycook, M.J. Aziz, G.C. Farlow and J. Rankin, "Ion Implantation and Annealing of Oxides", Materials Research Society Symposia Proceedings 74, 357-364 (1987).

30. J.Y. Tsao, M.J. Aziz, P.S. Peercy and M.O. Thompson, "Transition-State Model for Entropy-Limited Freezing", Materials Research Society Symposia Proceedings 74, 117-122 (1987).

29. M.J. Aziz, "Nonequilibrium Interface Kinetics During Rapid Solidification", Materials Research Society Symposia Proceedings 74, 31-44(1987) and 80, 25-38 (1987).

28. L.M. Goldman and M.J. Aziz, "Aperiodic Stepwise Growth Model for the Velocity and Orientation Dependence of Solute Trapping", Journal of Materials Research 2, 524-527 (1987).

27. T. Kaplan, M.J. Aziz and L.J. Gray, "Application of Onsager's Reciprocity Relations to Alloy Solidification", Materials Research Society Symposia Proceedings100, 603-608 (1988).

26. M.J. Aziz and T. Kaplan, "Continuous Growth Model for Interface Motion During Alloy Solidification", Acta Metallurgica 36, 2335-2347 (1988).

25. M.J. Aziz, "Interface Response Functions for Rapid Alloy Solidification: Theory and Experiment", in Undercooled Alloy Phases, eds. E.W. Collings and C.C. Koch (The Metallurgical Society of the AIME, Warrendale, PA, 1987), pp. 375-394.

24. M.J. Aziz and C.W. White, "Solute Trapping in Silicon by Lateral Motion of {111} Ledges", Physical Review Letters 57, 2675-2678 (1986)

23. M.J. Aziz, J.Y. Tsao, M.O. Thompson, P.S. Peercy and C.W. White, "Velocity and Orientation Dependence of Solute Trapping", Materials Research Society Symposia Proceedings57, 487-497 (1987).

22. C.W. White, P.S. Sklad, L.A. Boatner, G.C. Farlow, C.J. McHargue, B.C. Sales and M.J. Aziz, "Ion Implantation and Annealing of Crystalline Oxides", Materials Research Society Symposia Proceedings 60, 337-344 (1986).

21. M.J. Aziz and J.D. Budai, "Precipitation of Icosahedral Al-Mn During Pulsed Laser Melting", Journal of Materials Research 1, 401-404 (1986).

20. J.Y. Tsao, M.J. Aziz, M.O. Thompson and P.S. Peercy, "Asymmetric Melting and Freezing Kinetics in Silicon", Physical Review Letters 56, 2712-2715 (1986).

19. M.J. Aziz, J.Y. Tsao, M.O. Thompson, P.S. Peercy and C.W. White, "Solute Trapping: Comparison of Theory with Experiment", Physical Review Letters 56, 2489-2492 (1986).

18. J.D. Budai and M.J. Aziz, "Formation of Icosahedral Al-Mn by Ion Implantation into Oriented Crystalline Films", Physical Review B 33, 2876-2878 (1986)

17. M.O. Thompson, P.S. Peercy, J.Y. Tsao and M.J. Aziz, "Rapid Solidification Studies of a Model Alloy System", Applied Physics Letters 49, 558-560 (1986).

16. M.J. Aziz, "Modeling and Measurements of Solute Trapping", in Laser Surface Treatment of Metals, eds. C.W. Draper and P. Mazzoldi (Martinus Nijhoff Publishers, The Hague, Netherlands, 1986), pp. 649-662.

15. C.W. White and M.J. Aziz, "Energy Deposition, Heat Flow, and Rapid Solidification During Laser and Electron Beam Irradiation of Materials", in Surface Alloying by Ion, Electron, and Laser Beams, eds. L.E. Rehn, S.T. Picraux and H. Wiedersich (American Society for Metals, Metals Park, Ohio, 1986), pp. 19-50.

14. M.J. Aziz, C.W. White, J. Narayan, and B. Stritzker, "Melting of Crystalline and Amorphous Silicon by Ruby, XeCl and KrF Laser Irradiation," in Energy Beam-Solid Interactions and Transient Thermal Processing, eds. V.T. Nguyen and A.G. Cullis (Éditions de Physique, Paris, 1985), p. 231-236.

13. J. Narayan, R.V. James, O.W. Holland and M.J. Aziz, "Pulsed Excimer and CO2 Laser Annealing of Ion Implanted Silicon", Journal of Vacuum Science and Technology A 3, 1836-1838 (1985).

12. E. Nygren, M.J. Aziz, D. Turnbull, J.M. Poate, D.C. Jacobson and R. Hull, "Effect of Pressure on the Solid Phase Epitaxial Regrowth Rate of Si", Applied Physics Letters47, 232-233 (1985).

11. E. Nygren, M.J. Aziz, D. Turnbull, J.M. Poate, D.C. Jacobson and R. Hull, "Pressure Dependence of Arsenic Diffusivity in Silicon", Applied Physics Letters 47, 105-107 (1985).

10. M.J. Aziz, E. Nygren, W.H. Christie, C.W. White and D. Turnbull, "Effect of Pressure on Self Diffusion in Crystalline Silicon", Materials Research Society Symposia Proceedings 36, 101-104 (1985).

9. E. Nygren, M.J. Aziz, D. Turnbull, J.F. Hays, J.M. Poate, D.C. Jacobson and R. Hull, "Pressure Dependence of Arsenic Diffusivity in Silicon", Materials Research Society Symposia Proceedings 36, 77-82 (1985).

8. M.J. Aziz, J.Y. Tsao, M.O. Thompson, P.S. Peercy, C.W. White and W.H. Christie, "A Test of Two Solute Trapping Models", Materials Research Society Symposia Proceedings35, 153-158 (1985).

7. M.J. Aziz, E. Nygren, J.F. Hays and D. Turnbull, "Crystal Growth Kinetics of Boron Oxide Under Pressure", Journal of Applied Physics 57, 2233-2242 (1985).

6. J. Narayan, C.W. White, M.J. Aziz, B. Stritzker and A. Walthuis, "Pulsed Excimer (KrF) Laser Melting of Amorphous and Crystalline Silicon Layers", Journal of Applied Physics 57, 564-567 (1985).

5. J. Narayan, C.W. White, O.W. Holland and M.J. Aziz, "Phase Transformation and Impurity Redistribution During Pulsed Laser Irradiation of Amorphous Silicon Layers", Journal of Applied Physics 56, 1821-1830 (1984).

4. M.J. Aziz, "Crystal Growth and Solute Trapping", Materials Research Society Symposium Proceedings23, 369-374 (1984).

3. M.J. Aziz, "Dissipation-Theory Treatment of the Transition from Diffusion-Controlled to Diffusionless Solidification", Applied Physics Letters 43, 552-554 (1983).

2. M.J. Aziz, "An Atomistic Model of Solute Trapping", in Rapid Solidification Processing: Principles and Technologies III ed. R. Mehrabian, (National Bureau of Standards, Gaithersburg, MD, 1982), p. 113-117.

1. M.J. Aziz, "Model for Solute Redistribution During Rapid Solidification", Journal of Applied Physics 53, 1158-1168 (1982).

AMichael J. Aziz