Donhee Ham Research Group

Research Laboratory of Electronics & 
Integrated Circuits
at Harvard University


Principal Investigator - Donhee Ham
John L. Loeb Associate Professor of the Natural Sciences Electrical Engineering & Applied Physics, SEAS
Harvard University

Lab photo
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Donhee Ham Laboratory Facilities

Our group is located in a 90,000 sq. ft. Maxwell Dworkin Lab donated by Bill Gates & Steven Ballmer, occupying Rms 315, 316, 317, 133, & B133. Our lab is equipped with facilities for RF/microwave measurements, THz spectroscopy, and optical spectroscopy for experimentation with various integrated circuits & nanoscale solid-state devices at room & cryogenic temperatures. Specifically, our lab is equipped with:
 
1) Cascade probe station with an Nd/Yag laser and a micro chamber for on-wafer measurements up to 110 GHz;

2) Lakeshore cryogenic probe station for measurements up to 110 GHz at temperatures down to 3 Kelvin;

3) Femtosecond laser systems and bulk optics, including time-domain THz spectroscopy capabilities;

4) Spectrum analyzers, network analyzers, signal generators, function generators, phase noise analyzers, and real-time & digitazing oscilloscopes, capable of direct measurements up to 50 GHz and indirect measurements up to 110 GHz;

5) Micro-electronic and microfluidic assembly & packaging facilities, including a Westbond wirebonder; CVD setup for carbon nanotube growth;

6) CAD tools for IC design (Cadence, ADS, and Hspice) and EM field solvers (Maxwell, HFSS, and Sonnet).
Yong Liu
CVD
LTM
soliton
Lab photoWilliam Andress
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Harvard Center for Nanoscale Systems (CNS) Facilities: Harvard's CNS houses shared nano fabrication and characterization facilities, maintained by technical staff supported by Harvard. This is a major investment by Harvard to promote interdisciplinary research on small structures in areas including Electrical Engineering, Applied Physics, Biology, and Chemistry. CNS facilities include: 1) two clean rooms, one for soft lithography and the other for optical & e-beam lithography equipped with two e-beam lithography systems (including a Raith e-beam writer) - clean room facilities also include etching, deposition, and other aspects of nanofabrication, 2) an imaging laboratory that includes three SEMs, a Philips STEM, and a new JEOL TEM, and 3) advanced materials synthesis and processing equipment. A new building, the Laboratory for Integrated Science and Engineering (LISE), is currently under construction, paid for by Harvard. This new 85,000 sq.ft. building will house expanded facilities for CNS, as well as interdisciplinary research space.

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Maxwell-Dworkin Laboratory, Harvard U, 33 Oxford Street, Cambridge, MA 02138
PI Ph: (617) 496-9451, Fax:
(617) 495-2489, donhee@deas.harvard.edu
Lab1: (617) 496-0142, Lab2: (617) 496-0318, Lab3: (617) 495-1052